Abstract

With the hydrothermal method, the p-type silicon <100> wafer was used as the substrate to synthesize ZnO nanorods in different synthesis times. To prepare the ZnO seed layer on the p-type silicon <100> wafer, a prepared ZnO gel was deposited as the seed layer using the spin coating method. A 0.2 M solution of zinc acetate dihydrate (Zn(CH3COO)2-2H2O) and hexamethylenetetramine ((CH2)6N4) were used as the source materials at a synthesis temperature of 90 °C. The synthesis time was changed from 10 to 60 min as the synthesis parameter. X-ray diffraction patterns, scanning electron microscopy, and a focused ion beam system were used to analyze and compare the crystal characteristics and the heights and widths of synthesized ZnO nanorods. We found that the crystal characteristics, the heights and widths, and the photoluminescence properties of synthesized ZnO nanorods were dependent on the synthesis time.

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