Abstract
120 MeV Ag9+ swift heavy ions have been irradiated on Ag-doped GST thin films and its effect on structural and electrical properties of the thin films have been investigated. X-ray diffraction pattern reveals that the phase of the thin films is maintained after irradiation for 3% Ag-doped GST thin films. The flattening of peaks in Raman spectra indicate the breakage of vibrational bonds in the GST thin films after irradiation. The impact of the swift heavy ion irradiation on the electrical properties of the thin films was studied using I-V measurements. A sharp increase in current with Ag-doping and swift heavy ion irradiation is observed. Defects introduced by doping and irradiation may result in the introduction of charge carriers which can increase the current at low voltages in these thin films.
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