Abstract
Amorphous As2Se3 thin films were prepared using thermal evaporation technique onto glass substrate at room temperature. Deposited thin films were irradiated with 100 MeV Ag swift heavy ions for three different fluences (1×1011, 3×1011, and 1×1012 ions/cm2). The transmission spectra of thin films before and after irradiation were investigated. Optical bandgap and refractive index are derived from the above spectra. Reduction in optical bandgap (1.78 to 1.64 eV) and increase in refractive index (2.84 to 2.91) with increase in ion fluence are explained in terms of structural changes in the films.
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