Abstract
In this work, we study the electrical properties of contacts to p-CdTe, formed by different methods. Two types of symmetric structures (Cu–Au/p +/p-CdTe/p +/Au–Cu and Mo–MoO x /p +/p-CdTe/p +/MoO x –Mo) with p + regions, obtained by different surface-treatment methods, are used. In order to determine the optimum conditions for the formation of high-quality ohmic contacts to p-type cadmium telluride, the electrical properties of the symmetric structures are studied. To compare the characteristics of the obtained ohmic electrical contacts, the measurements are conducted under both constant and alternating current over a wide frequency range.
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Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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