Abstract
The transformation of SiC etching shapes by high-temperature annealing has been investigated. Without silicon atoms on the surface, transformation of the etching shapes hardly occurred even after annealing in pure Ar at 1700 °C, where transformation should occur without the loss of silicon atoms. When SiH4 was added to Ar, the surface tended to revert to SiC, and the transformation was enhanced with increasing SiH4 addition. Therefore, the presence of silicon atoms is necessary to transform the etching shapes on SiC surfaces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
