Abstract
We measure the photoinduced carrier dynamics as the surface composition of CdSe nanocrystals is systematically varied from metal rich (∼80% surface Cd) to nearly stoichiometric (∼50% surface Cd). Using time-resolved optical spectroscopy, we determine that the luminescence lifetime is controlled by the rate of hole trapping at the newly exposed surface selenium atoms. However, the increased rate of the photoluminescence decay is not sufficient to explain the decreased photoluminescence quantum yield, and requires a growing proportion of nanocrystals in a dark or “OFF” state to explain the data. A global kinetic model is proposed that relates the fraction of selenium sites to the rate of hole trapping. A linear relationship between the rate of hole trapping and the fraction of exposed Se sites (xSe) is observed within the range of accessible stoichiometries (xSe = 0.5–0.2). Extrapolation to higher surface cadmium fractions suggests that not all Se sites serve as effective hole traps. These results explain t...
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.