Abstract
where n o and P0 are the equilibrium electron and hole concentrations, 6 is their excess concentration, and r is a constant for a given semiconductor and a given temperature. We see that fl depends on the concentration of equilibrium carriers, and we can expect it to increase considerably when a semiconductor is doped with impurities which raise the concentration of equflibrinm carriers. However, there may also be an increase in the rate of radiatiouJess transitions which would tend to prevent an increase in ft.
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