Abstract
The impact of surface roughness (SR) and phonon scattering on extremely narrow InAs-Si Nanowire TFETs is studied in this paper. The rough surface of the nanowire is generated by randomly distributing the atoms at the InAs-Si/Oxide interface according to an Ando-like exponential auto-correlation function. Phonons are atomistically treated by means of the valence-force-field method. A full-band and atomistic quantum transport simulator based on the sp3d5s* tight-binding model and the non-equilibrium Green's function formalism is used to solve the quantum transport problem where the electron-phonon interactions are tackled within the self-consistent Born approximation. Phonon scattering is found to have no major effect on the device ON-state, while in the OFF-state the current is significantly increased. SR scattering has a detrimental impact on the TFET performance with a ON-current reduction by almost two orders of magnitude, but it induces limited variability. A direct comparison of both scattering mechanisms reveals the dominant behavior of SR over phonon scattering.
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