Abstract
The surface recombination rates for p-type HgCdTe layers with different dopant concentrations and trap densities Nt are calculated. It is shown that, at the given initial parameters, the surface recombination rate Smax lies in the range of 10–104 cm/s. The current sensitivity for p-type HgCdTe is simulated using the dependence of quantum efficiency in the approximation of large lifetimes τn0 and large diffusion lengths Ln of minority charge carriers, taking into account the effect of the surface recombination rate.
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