Effect of surface optical phonon on the surface impurity states of GaAs and CdS

Abstract

The effect of the surface optical phonon on the low lying surface impurity states of isotropic semiconductors GaAs and CdS are studied by a variational perturbative approach. The electron-surface phonon coupling constants for these two semiconductors are relatively small and thus can be treated as a perturbation. The ground and the first excited state energies of the surface polaron are calculated and compared with the previous work.