Abstract
This work reports on the impact of surface modification on the optical absorption and luminescence response of vacuum deposited tris(8-hydroxyquinoline) gallium (Gaq3) films. This surface modification was achieved by means of thermal treatment under nitrogen gas in the temperature range from 85 oC to 255 oC. The results of field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD) technique ascertained the formation of amorphous nano-rods along the surface of Gaq3 films. Considerable improvement in the absorption and luminescence characteristics of Gaq3 films was observed upon surface modification, which has been resulted from this treatment process.
Highlights
This work reports on the impact of surface modification on the optical absorption and luminescence response of vacuum deposited tris(8-hydroxyquinoline) gallium (Gaq3) films
Tris(8-hydroxyquinoline) gallium (Gaq3) is a well-known organometallic material widely used in the development of organic electronics devices such as organic light emitting diodes (OLEDs) and organic solar cells (OSCs) [1,2,3,4]
It was reported that the utilization of Gaq3 in OLEDs has improved the device performance in comparison to that of the tris(8hydroxyquinoline) aluminium (Alq3) based ones [5]
Summary
This work reports on the impact of surface modification on the optical absorption and luminescence response of vacuum deposited tris(8-hydroxyquinoline) gallium (Gaq3) films. Thermal evaporation under cold trap at different working temperatures and pressures was examined to fabricate crystalline Alq3 and Gaq3 nanostructures on silicon substrates [13, 15].
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