Abstract
Nano-structure stiction during drying has often occurred due to scaling of semiconductor devices. For less stiction drying technology, lower surface tension liquids such as isopropyl alcohol (IPA) or super critical fluid (SCF) have been developed, but are lacking in enough performance or maturity for 300 mm leading-edge device wafer treatment. Thus, we have focused on the surface energy reduction process which enables separation of the once adhering structures. We have evaluated the effect of the surface energy on the stiction with both calculation and experimental data, and have successfully demonstrated that the surface energy reduction process can suppress high aspect-ratio nano-structure stiction.
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