Abstract
Prediction of the temporal evolution of a pre-existing hole on a solid-state thin film has important implications for self-organized nanoscale pattern formation. In this work, we employ a three-dimensional phase-field model to elucidate the mechanism of corner instability during capillary-driven hole growth in a single-crystalline free-standing thin film. We perform a systematic study to demonstrate the effect of crystalline anisotropy in surface energy, surface diffusivity, and film thickness on hole growth. Our simulations reveal that the instability during hole growth arises due to saturation of the rim height at the corner of the hole that is directly related to the arc length of the corner, specified by the anisotropy in surface energy. Our investigation further reveals the presence of a time-invariant shape of the corner with the onset of corner instability.
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