Effect of surface electric field on the gate capacitance of metal-oxide-semiconductor structures of ternary semiconductors

Abstract

An attempt is made to derive a generalized expression for the gate capacitance of metal-oxide-semiconductor structures of ternary semiconductors without any approximations of weak or strong electric field limits. It is found, taking n-channel layers on p-type Hg1−xCdxTe as an example, that the same capacitance increases with increasing surface field and the approximated results overestimate the numerical values for both limits. The theoretical formulation is in good agreement with the experimental observation as reported elsewhere, and the corresponding well-known results for n-channel inversion layers on parabolic semiconductors are also obtained from the expressions derived.