Abstract

A semi-empirical ion sputtering model (SEISM) was extended for clearer ripple profiles on material surfaces on which atoms self-organise into rippled topography. The improvement was by way of modifying the sputter erosion algorithm with implementation of the curvature dependence of sputter yield and the avoidance of shadowing effect. And by way of modifying surface relaxation through adaptation of a surface diffusion algorithm that is popular in Monte Carlo simulations of material growth by particle deposition (growth of thin films) as a replacement for the surface reorganisation algorithm of the SEISM. Prior to these extensions, the SEISM model exhibited some characteristic properties of sputtered surfaces but gave indistinct ripples. With the extensions, the model gives a clearer indication of distinct ripple topographies. Specifically, surface stability was improved when the original surface reorganisation algorithm of the SEISM was replaced.

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