Abstract
Single quantum well, graded refractive index separate confinement heterostucture (SQW GRINSCH) lasers with well thicknesses in the range of 65–480 Å have been grown by molecular beam epitaxy (MBE) on (100) and off of (100) by 4° toward (111) A substrates. The threshold current density appears to be independent of the well thickness in the range of 65–165 Å due to the compensating effects of volume of inversion and optical confinement. Under optimum growth conditions, the tilted substrates led to lower threshold current densities, the lowest value being 93 A/cm2 for a 520-μm-long cavity laser with a 125-Å-thick well. To our knowledge, this is by far the best ever reported threshold current density obtained in a semiconductor injection laser. Deviations from optimum growth conditions drastically increased the threshold current density on (100) substrates whereas the degradation for those on the tilted substrates was much less pronounced.
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