Abstract
Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 °C. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation. The maximum crystallite size value of the film deposited at 350 °C is 55.46 run. Spectrophotometer (UV-vis) of a Co doped ZnO film deposited at 350 °C shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 °C. The electrical conductivity of the films deposited at 300, 350 and 400 °C were 7.424, 7.547 and 6.743 (Ω·cm)−1 respectively. The maximum activation energy value of the films at 350 °C was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.
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