Abstract
NiO is a widely used p-type semiconductor. The desired optical and electrical properties of NiO vary in different application fields. To modulate the properties of NiO, nitrogen (N)-doped NiO thin films were synthesized by reactive radio-frequency magnetron sputtering on ITO-coated glass substrates. The influence of substrate temperature on the properties of NiO was investigated. XRD studies indicated a cubic structure. With the increase of the substrate temperature, the average transmittance in the visible region gradually reduced from 90% to 50%. The bandgap energy narrowed from 3.5 to 3.08 eV. The intensity of the PL spectra weakened, and the electrical conductivity rose. Overall, changing the substrate temperature is an effective method to modulate the optical and electrical properties of N-doped NiO thin films.
Highlights
As a promising metal-oxide material in the semiconductor field, NiO has attracted a lot of attention in recent years
The target was cooled by running water, the temperature of the targetincreased surface increased as the substrate temperature which the temperature of the target surface as the substrate temperature increased,increased, which resulted resulted in an increase of the activation energy of atoms and an increase of the sputtering rate
N-doped NiO thin films at different substrate temperatures were prepared by radio-frequency reactive magnetron sputtering
Summary
As a promising metal-oxide material in the semiconductor field, NiO has attracted a lot of attention in recent years. NiO is a wide-bandgap p-type semiconductor applied as a transparent conducting film [1], electrode in electrochromic devices [2], and functional layer for chemical sensors [3]. These applications strongly depend on its optical and electrical properties. Changing the deposition conditions, heating treatment, and doping is effective to regulate the optical and electrical properties of NiO thin films. Nandy et al [10] studied the effect of oxygen partial pressure on the electrical and optical properties of NiO thin films. Considering the small adjustments possible for deposition conditions and heating treatment to modulate NiO
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