Abstract
Electrical and optical properties of indium tin oxide films coated on soda-lime glass substrates have been investigated as a function of substrate temperature (Ts=250–450 °C). Highly conducting (ϱ≈8 x 10−4 Ω cm) and transparent (T≈90%) films have been obtained at a substrate temperature of 350°C and above. An increase in carrier concentration accompanied by a widening in optical band gap (the Burstein-Moss shift) have been observed with increasing substrate temperature. Enhancement of carrier concentration at higher substrate temperatures may be attributed to the presence of higher valency states of tin (Sn4+) occupying the indium sublattice of indium oxide.
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