Abstract
CdZnTe thin film transistor (TFT) detector was deposited on Si/SiO 2 substrate by radio frequency (RF) magnetron sputtering technique. The influence of substrate temperature on the structure of CdZnTe film and the performance of CdZnTe TFT detector were studied. The sputtered CdZnTe films have a multiphase structure consisting of the CdZnTe phase, ZnTe phase and Te phase. (IDS–VDS) characteristics and photosensitivity of CdZnTe TFT detectors at different substrate temperature were reported. When the substrate temperature was 200 °C off-current in CdZnTe TFT detector achieved minimum value of 1.9×10−11 A, as well as a higher photosensitivity of 1.9×103 (obtained at VGS=28.5 V). The optimal condition for preparing CdZnTe TFT detector was the substrate temperature of 200 °C.
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