Abstract
In this paper, gallium oxide thin films at different substrate temperatures were deposited on Indium TinOxide (ITO), glass and p-type silicon wafers by radio-frequency magnetron sputtering (RFMS). The effect of substrate temperature at 8 mTorr deposition pressure on the structural, morphological and optical properties of films was investigated. X-ray diffraction (XRD) analysis of thin films deposited on p-Si substrate suggests that crystal structure characteristics of synthesized thin films depend on the substrate temperature. From SEM analyzes of Ga2O3 thin films grown on p-type silicon substrate, It was observed that when the temperature increased, a porous structure appeared and the particle size changed depending on the substrate temperature. Morover, optained results from the absorption measurements, the band gap energy of the Gallium Oxide thin films deposited on the p-Si substrate decreased with increasing substrate temperature.
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