Abstract
We synthesized ZnO:Co thin films on sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) method. X-ray diffraction (XRD) spectra indicated that all samples possessed wurtzite structure with the preferential c-axis-orientation and the value of the c-axis lattice decreased with increasing substrate temperature. UVvis transmittance spectra and X-ray photoelectron spectroscopy (XPS) implied that Co2+ions incorporated into ZnO lattice with substitution for Zn2+ions and the non-bivalent Zn existed in as-prepared thin films. Two emission bands located at 418 nm (2.97 eV) and 490 nm (2.53 eV) were observed from the photoluminescence (PL) spectra of all samples. The two emission bands were in relation to Zn interstitials and the complex of VOand Zni(VOZni). The quantity of the Zn interstitials remained mostly invariable as substrate temperature increased.
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