Abstract
A Si deep-trench etching process using HBr/SF6/O2 plasma was studied. It was found that when the hole trench width was decreased from 190 to 140 nm, erosions at the topmost part of the Si hole sidewall were observed at an incidence of 10 ppm, which was checked from top-down views of 928 million hole shapes per wafer. It was confirmed that when the cathode temperature was increased to 140 °C, no Si erosion occurred. It was found that etching at a higher temperature reduced the halogen content in the film deposited on the sidewall, making the film more protective, and suppressed Si erosion.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
