Abstract
Room temperature ferromagnetic Zn0.95Co0.05O thin film with (002) preferential orientation has been deposited by pulsed laser deposition at different substrate temperatures on n-type (100) silicon substrate. A maximum saturation magnetization of 0.86μB∕Co was achieved at room temperature. High-resolution transmission electron microscope and x-ray photoelectron spectroscopy results indicate that this ferromagnetism behavior is not due to Co microclusters in the thin film. Zinc interstitials, oxygen vacancies, and lattice defects induced by low substrate deposition temperature show a significant effect on ferromagnetic behavior. By changing the substrate deposition temperature to control the amount of zinc interstitials, oxygen vacancies, and lattice defects, ferromagnetism can be tuned significantly as well, which is a direct evidence that these defects contributed to the ferromagnetism in ZnO:Co thin films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
