Abstract
CoSi 2 buried layers were synthesized by implantation of Co into Si (1 0 0) substrates at different substrate temperature with a metal vapor vacuum arc ion source. θ–2 θ X-ray diffraction patterns showed that these buried layers had a strong (1 0 0) preferred orientation at low temperature of substrate. Rutherford backscattering spectrometry and four-point probe measurement showed that the substrate temperature has a significant influence on the crystallinity and electrical properties of CoSi 2 buried layers.
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