Abstract
ZnO thin films have been deposited on glass substrates by radio frequency (RF) magnetron sputtering from a zinc oxide target in order to investigate the effect of RF power and substrate temperature on the properties of the deposited films. The structural and optical properties of the films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV-Vis transmission spectra and photoluminescence (PL). All ZnO thin films exhibited diffraction peak of (002) corresponding to c-axis orientation and the film deposited at 450°C exhibited the larger grain size as a result of stress relaxation. It is observed that the increase in substrate temperature or sputtering power can facilitate the growth of ZnO in (100) and (101) direction. PL emission was obtained at UV and visible region for the excitation wavelengths of 280 nm and 390 nm respectively. PL study indicated that both the crystal quality and stoichiometry can influence the UV PL emission in ZnO thin films. Dependence of temperature and power on transmission spectra was studied and the optical band gap was calculated.
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