Abstract
The crystalline microstructure of HgTe, CdTe and HgCdTe layers grown by MOCVD on CdTe and GaAs substrates has been found to be critically dependent on the orientation of the growing surface.CdTe layers grown on (111)A and (111)B orientations contain a large number of microtwins. However in the HgTe growth, twins were detected only in (111)A case. For ternary compounds the tendency of twinning in the (111)B orientation was found to be dependent on composition. Twin free Hg 0.74Cd 0.26Te layers have been grown.
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