Abstract
AbstractZnO thin films were deposited on glass, Si, SiO2 and NiO substrates with radio frequency (RF) magnetron sputtering using a ZnO target. ZnO films on glass and SiO2 substrates were relatively smooth and dense with similar surface morphology, while Si gave porous films, and the porosity increased with increasing film thickness. XRD analysis suggested that the ZnO films on Si, SiO2 and glass were highly oriented along the c‐axis. Films on glass and SiO2 had lower compressive internal stress than those on Si. The results of Hall effect measurements indicated that the conductivity of ZnO films on Si, SiO2 and glass increased with increasing film thickness. However, the changes of carrier concentration and mobility with film thickness are different for the different substrates. XPS showed that the Zn to O ratio on Si is higher than those on SiO2 and glass. The mechanism of the substrate effect is then briefly discussed on the basis of the experimental results. Copyright © 2007 Curtin University of Technology and John Wiley & Sons, Ltd.
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