Abstract
The effect of substrate induced strain and Fe/Rh stoichiometry on the antiferromagnetic (AFM)-ferromagnetic (FM) first order transition in sputter deposited FeRh thin films has been studied. Fe1−xRhx films of about 50 nm thickness and with x = 0.45, 0.50, 0.55 were deposited using magnetron sputtering on MgO (001), Al2O3 (0001) (AlO) and quartz (Qtz) substrates. These films were found to be epitaxial under compressive strain on MgO and polycrystalline under tensile strain on AlO. Films with x = 0.50 and 0.55 showed a first order AFM-FM transition near or above 300K. Our study shows that the transition temperature (Tt) is dictated by strain as it was found to vary linearly with out-of-plane strain for films on MgO and AlO. In the case of films on Qtz substrate, an open loop in isothermal magnetoresistance (MR) with a large negative MR was observed at room temperature.
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