Abstract
At the present time,photoresist s are widely utilized in various areas of the national economy [1]. Further progress in photolithography, particularly in the use of projection methods, is bound up with an increase in the light sensitivity, and consequently, with a decrease in the duration of the photoreaction in the light-sensitive base of the photoresists. Esters of 1,2-naphthoquinone-(2-diazo)-5-sulfonic acid (]~NQDA) are widely used as the base substance. 2here are reasons to suppose that the light sensitivity of ]~NQDA should depend on the nature of the substituents in the I~NQDA molecule. Indeed, when halogens are introduced into the I~NQDA molecule, the light sensitivity is enhanced [2, 3]. The object of the present workwas to systematically study the effect of substituents on the rate of the photochemical reaction of a series of ]~NQDA with the general formula: O I1 +
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