Abstract
Monolithic device integration of crystalline complex oxide thin films can open for smarter and more sustainable devices in electronics and energy technology. However, the facile integration of such...
Highlights
Epitaxial complex materials systems with tunable functionality will play an important role in the transition to smarter, greener, and more sustainable technologies for electronics and energy.[1]
The direct epitaxy of LaNiO3 at 225 °C was recently reported by Sønsteby et al, and we point the reader to that article for details on the growth and crystallographic quality.[3]
We provide a discussion on the effect of the subcycle arrangements in the deposition of crystalline films by atomic layer deposition using the growth of LaNiO3 on LaAlO3 (100)pc as an example
Summary
Epitaxial complex materials systems with tunable functionality will play an important role in the transition to smarter, greener, and more sustainable technologies for electronics and energy.[1] Functional properties such as piezo- and ferroelectricity, ferromagnetism, and superconductivity are best understood by the long-range order of correlated electrons that an epitaxial relationship provides These properties are often highly anisotropic, making it crucial to control the crystal orientation. Breakthroughs in material design concepts utilizing epitaxy in substrate||film systems have traditionally come from physical deposition techniques such as molecular beam epitaxy (MBE), pulsed laser deposition (PLD), and sputtering While these techniques often provide brilliant insight into novel functional materials systems, they require high growth temperatures and high vacuum instrumentation and are often somewhat constrained in terms of material availability, substrate type, and/or geometry. They rarely offer the possibility of depositing and studying metastable phases due to the inherent high growth temperatures
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