Effect of Sub 2-Nm Pt Nanoparticle on the Conduction Properties of Graphene Based Field Effect Transistor

Abstract

Graphene-based transistors are attractive platforms due to graphene’s promising electrical properties. Currently, depositing and controlling the size distribution of metal nanoparticles (NPs) on a support surface, such as graphene, without damaging the support is an issue faced in applications involving metal (NPs) in new age electronics. To overcome this barrier, we have developed a low power tilted target sputtering process for achieving sub-2 nm metal (NPs) on graphene with controlled sizes, number densities, and narrow size distributions. In this report, we study the unique properties of platinum (Pt) NPs and their applications in graphene-based FETs by modifying the conduction channel with sub-nm Pt NPs. By using ultra-small size Pt NPs with quantized energy level, we influence the electrical properties of large area single layer graphene through both electron transfer and carrier scattering, resulting in large Dirac point shifting (0.15MV/m for 300nm of SiO2 as blocking oxide) in the I-V characteristics and change in conductivity, respectively; all of which could be helpful to better understand the metal NP-Graphene interaction. We also show that the plasma damage created on the graphene surface from the sputter deposition of metal nanoparticles can be removed by 250 oC annealing in hydrogen.