Abstract
For the interface heterostructure between metal and organic layer of Quantum dot light-emitting diodes (QLED), tunneling injection model Fowler-Nordheim (F-N) was used to analyze the electrical characteristics of QLED. Through analyzing different thickness and the potential barrier of metal organic layer interface of QLED structure, simulation by Matlab obtained the J-V characteristic curves of the injection limit current density and the driving voltage. The simulation results showed that reducing the whole device thickness and the barrier height of metal organic layer interface of QLED structure, the energy consumption will be decreased. That is to say, carriers injection properties can be improved with the thinner device and lower barrier height, operating at the same voltage.
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