Abstract
The effect of the structural properties on the optical characteristics was investigated for In0.3Ga0.7N nanocolumns (NCs) grown on GaN NCs as a function of GaN column diameter, DGaN. With increasing DGaN, the photoluminescence spectra changed from single-peak to double-peak emissions at the diameter D0 where InGaN axial NCs change to InGaN–InGaN core–shell NCs. For the core–shell NCs, the volume recombination probabilities of the InGaN cores did not change with DGaN. Whereas the surface recombination probability of the InGaN cores exponentially decreased because of the spontaneous formation of InGaN shells for DGaN > D0, it drastically increased for DGaN ≤ D0.
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