Abstract
The efficiency of Quantum Dots (QDs) devices, is strongly related to their distribution, density and size, and shape in a QD array.The small size of the QD structure leads to a three-dimensional confinement of the electronic energies. The energy levels of electrons in QDs depends on their size – the smaller the quantum dot, the greater the amount of energy required to give electrons transitions to the next level. In this paper, we report the simulation results of pyramidal InAs/GaAs QDs coupled to Wetting Layer (WL). To investigate the effects of the InAs/GaAs QDs size on the electronic states and the transition energy. In the first part, we calculate the strain distribution to find the band edges, while the second one concerns the variation of the electronic transition energy as a function of quantum dots size by solving the stationary Schrodinger equation. This work shows clearly that the structural properties of QDs have strong effects on optoelectronic properties devices based on these nanostructures.
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