Abstract
Temperature-dependent Hall effect and resistivity measurements are performed on polycrystalline Cu2O:Sr thin films deposited on glass substrate by metal organic-chemical vapor deposition. Their electrical properties are studied as a function of the strontium content, as determined by wavelength dispersive X-ray spectrometry. These electrical transport measurements highlight a copper vacancy doping mechanism induced by strontium incorporation, leading to a large decrease of the resistivity as low as 1.2 Ω·cm and corresponding free carrier mobilities about 15 cm2·V–1·s–1 at room temperature. Moreover, in addition to the main copper vacancy acceptor level, found at EA1 = 278 ± 21 meV above the top of the valence band, a coexisting shallower acceptor level with an ionization energy of EA2 = 133 ± 15 meV occurs for a strontium content above 5% and is tentatively assigned to a large size impurity–vacancy complex.
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