Abstract
AbstractA high resolution quenched interface technique has been used to study the solid/liquid interface of the Al–Si eutectic solidified at extremely low growth rates. The interface morphology of the pure eutectic and also that of samples doped with Sr or P were studied. The observations were consistent with the twin plane re-entrant edge (TP RE) growth model for the pure eutectic and with a change to non-TPRE growth in the presence of Sr. On the other hand, P was found to have an effect on the relative tendencies towards faceting of the two phases.MST/923
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