Abstract
Dislocation propagation during epitaxial lateral overgrowth (ELO) of diamond on Ir using stripe nucleation with two different orientations was investigated by cross-sectional Transmission Electron Microscopy and Etch Pit Method. In case of 〈100〉 stripes with diamond {100} growth sector, [001] dislocation and large inclined dislocation were observed. For 〈110〉 stripes with {111} growth sector, dislocation bending was observed with [110] propagation preferred. These results demonstrate that stripe direction in ELO affects dislocation propagation during diamond growth. The control of growth sector can be used to influence the dislocation distribution in heteroepitaxial diamond.
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