Abstract

植物角质层蜡质在抵抗各种生物和非生物胁迫中起着非常重要的作用。本试验以水稻( Oryza sativa L.)幼苗为材料, 分别以200 mmol L -1 NaCl、12% PEG、1.0% H 2 O 2 、40℃高温和8℃低温为逆境, 研究叶角质层蜡质的积累情况以及其与水稻蜡质合成相关基因 OsGL1 表达的关系。扫描电镜观察以及叶角质层蜡质总量测定结果表明, 12% PEG、1.0% H 2 O 2 和8℃低温处理下水稻幼苗叶角质层蜡质的积累明显增加, 而200 mmol L -1 NaCl和40℃高温处理下叶角质层蜡质覆盖量略有下降。RT-PCR分析显示, 逆境处理下水稻蜡质合成相关基因 OsGL1 的表达量变化与水稻幼苗叶角质层蜡质的积累存在相关性。

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