Abstract
In situ isothermal x-ray diffraction were performed on Ni∕a-Si and Ni(5%Pt)/(100)Si. In the Ni∕a-Si samples, there is a time delay between the formation of NiSi and the end of the growth of Ni2Si. In the Ni(5%Pt)/(100)Si, the growth of the NiSi phase is accelerated after a time delay. The time delay is related to the strain relaxation in Ni2Si; i.e., the growth of NiSi starts (pure Ni case) or is accelerated [Ni(Pt) case] when most of the strain in Ni2Si is relaxed. This shows that the intrinsic stress associated with the growth of silicide influence the reactive diffusion.
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