Abstract
Impurity-free interdiffusion of GaAs/AlGaAs quantum wells was investigated for SiOx capping layers grown by plasma-enhanced chemical vapor deposition. Dielectric layers were deposited for various nitrous oxide flow rates, N(30 sccm < N < 710 sccm), while maintaining a fixed silane flow rate. The oxygen content, x, of the dielectric increased monotonically with N and stoichiometric oxides were deposited above N 5 350 sccm. However, the blue shift in quantum wells did not follow a similar trend as the variation of x. Following rapid thermal annealing, the blue shift increased with the increasing N to exhibit a maximum in the range 100 sccm , N , 200 sccm. Any further increase in N resulted in a decrease in blue shift, which reached an almost constant value for N . 350 sccm. It is shown that this maximum in the blue shift is due to the stress imposed by the SiOx layer on the GaAs/AlGaAs heterostructure. © 2001 The Electrochemical Society. @DOI: 10.1149/1.1339242# All rights reserved.
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