Abstract
The theory of the stress dependence of the diode current in the exhausted condition, developed previously, is extended to that in the non-exhausted condition. The current changes due to stress are calculated for the main crystallographic orientations by taking into account the changes in the minority carrier concentrations and in the minority carrier mobilities. The changes in the minority carrier concentrations are calculated by taking into account the shifts in the shallow impurity levels. The results of the exhausted condition are also valid in the non-exhausted condition at room temperature. At lower temperatures, in general, the stress dependence of the minority electron concentration np overcomes that of the minority hole concentration pn. In Si, the stress dependence of the diode current of the diode in which np is much greater than pn, is larger than that of the diode in which pn is much greater than np.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
