Abstract
The structural, electrical, optical, and thermal characteristics of SiH monolayer were assessed using first-principles based calculations. The SiH monolayer is a semiconductor by nature and we found that the energy band gap remains zero by applying (-10%, -5%, -2%, 0%, 2%5%, 10%) different orders of strain into this material. The optical characteristics of SiH are examined for photon energies between 0 and 10 eV and electrical, thermal, Seebeck coefficient, and power factor against temperature (300˚ K 800˚ K) is reported. SiH monolayer has theoretical power conversion efficiencies up to 20%. SiH monolayer under consideration is appropriate for photovoltaic and optoelectronic applications, according to their electrical, optical, and thermoelectric characteristics.
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