Abstract
The electronic structure of the AA stacked GeSe bilayer is investigated using the density functional theory (DFT) calculations. Bilayer is an indirect band gap semiconductor having band gap equal to 1.05 eV. This indirect band gap can be further tuned via in-plane strain along zigzag and armchair direction. Further, there is an indirect-to-direct band gap transition at tensile strain of 2% along the zigzag direction.
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