Abstract
We present a numerical study on the effect of mechanical strain on the electron mobility and the averaged electron velocity of graphene, where the graphene is assumed to be suspended and the phonon scattering is the dominant scattering mechanism. By employing the tight-binding formalism to describe the electronic band structure in the presence of strain and the Boltzmann transport equation to describe the non-equilibrium carrier transport in the presence of phonon scattering, the electron mobility was found to decrease nonlinearly with increasing the strain.
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