Abstract
B and Ga co-doped ZnO films were fabricated by RF magnetron sputtering method. The effects of sputtering pressure on the electrical, optical, structural and morphological properties of the films (BGZO) were investigated. As sputtering pressure increased up to 6mTorr, the film crystallinity was improved. At the sputtering pressure of 6mTorr, the films showed smooth and dense of film surface, lower resistivity and higher Hall mobility. It was also observed that all films showed high transparency in the visible range. The film showed blue shift of optical band gap with increaseing of sputtering pressure.
Highlights
For most optoelectronic devices such as flat panel displays, it is essential to use a transparent electrode consisting of a thin film of a transparent conducting oxide (TCO) semiconductor
We can observe that when the sputtering pressure is 6mTorr, the B and Ga co-doped ZnO (BGZO) films shows the uniform crystalline size and better smooth and dense of film surface
The carrier mobility of the BGZO films increased with increasing the sputtering pressure up to 6mTorr and decrease with further increasing of sputtering pressure
Summary
For most optoelectronic devices such as flat panel displays, it is essential to use a transparent electrode consisting of a thin film of a transparent conducting oxide (TCO) semiconductor. Given the high cost and scarcity of indium, transparent conducting impurity-doped ZnO, such as Al-, In-, B-and Ga-doped ZnO (AZO, IZO, BZO and GZO, respectively), has recently attracted much attention as a promising alternative TCO material for application in flat-panel displays, window layers in thin film photovoltaic, and energy-efficient windows with low infra-red (IR) transmittance because of their excellent optical and electrical properties, low material costs, relatively low deposition temperature, non-toxicity, and stability in hydrogen plasma[3,4,5,6,7]. In order to develop TCO films with better properties and suitable for specialized applications previously proposed material development using multicomponent doping has recently been attracting much attention as a source of new TCO semiconductors, such as B and Al co-doped ZnO (BAZO), Mg and Ga co-doped ZnO (MGZO), Al and Ga co-doped ZnO (AGZO) [8,9,10]. The effect of sputtering pressure on optical, electrical and structural properties of BGZO films was studied in detail
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