Abstract
Thin films of amorphous indium gallium zinc oxide amorphous indium-gallium-zinc-oxide (a-IGZO) were fabricated by DC magnetron sputtering. The influence of sputtering pressure on the microstructures and the electronic properties were investigated. AFM characterization on surface morphology demonstrates that the surface roughness increases with higher sputtering pressure. The oxygen vacancies of the a-IGZO films change considerably and are reduced significantly with increasing sputtering pressure, as disclosed by X-ray photoelectron spectroscopy. Both the increased surface roughness and reduced oxygen vacancy are detrimental to the performance of a-IGZO TFTs. From this point of view, the sputtering should be done at a proper pressure of 0.06 Pa in order to ensure the enhanced performance. The electron saturation mobility ( μ sat ) and the threshold voltage ( V TH ) of the a-IGZO TFTs are 3.32 cm 2 /(V·s) and 24.6 V at such a sputtering condition, respectively.
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