Abstract

FePt films were prepared by RF sputtering using Ne, Ar, and Kr as sputtering gas. The effects of sputtering gas on the microstructure and magnetic properties were studied. Both magnetic and crystallographic properties show that Kr gas promotes the formation of L1 0 phase. The films prepared by using Ar and Ne gas have random orientation, whereas the films prepared by using Kr gas show preferential c-axis perpendicular to the film plane orientation.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.