Abstract
To investigate the bulk state mixing due to the presence of the quantum well interfaces, we employ an exact solution for the hole subband dispersion of a [001] symmetric GaAs/AlGaAs quantum well, within the 6×6 Luttinger model, which extends previous work by Andreani, Pasquarello and Bassani for the 4×4 case. Numerical results are presented for the hole subband states and in-plane dispersion curves of a 66 Å AlAs-GaAs-AlAs quantum well, which show anticrossing behaviour. The nature of anticrossings between the 1 st/2 nd and the 8 th/9 thsubbands is investigated by studying the bulk state decomposition of the envelope functions. In the vicinity of the 1 st/2 nd subband anticrossing, there is a negligible bulk GaAs spin split off band content. In contrast, in the region of the anticrossing for the higher 8 th and 9 th subband states, there is considerable GaAs spin split off band amplitude, as the GaAs spin split off band is nearby in energy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
