Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes

Abstract

In this paper, an effect of space charge region (SCR) width on Er-related electroluminescence (EL) in reverse biased Si:Er-based light-emitting diodes (LEDs) is under investigation. It is concluded that a trivial widening of the SCR in the examined LEDs with triangular and trapezoidal electric field profiles through SCR does not result in a desirable increase in the Er-related EL intensity. The tunnel transit-time diode structure with a complicated electric field profile through SCR is offered to increase the Er-related EL intensity. The difficulties hampering this process in erbium EL from reverse biased LEDs are under discussion